Cart (Loading....) | Create Account
Close category search window
 

The influence of emitter material on silicon nitride passivation-induced degradation in InP-based HBTs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Hong Wang ; Microelectron. Center, Nanyang Technol. Univ., Singapore ; Hong Yang ; Radhakrishnan, K. ; Tien Khee Ng
more authors

The influence of emitter material on silicon-nitride (SiN) passivation-induced degradation in InP-based heterojunction bipolar transistors (HBTs) has been studied. It has been found that, compared to InP, InAlAs has a much higher resistance to NH3-related plasma-induced damage. InP-based HBTs using InAlAs as the emitter can effectively suppress the degradation of device performance caused by dielectric passivation giving least deterioration on the device characteristics compared to the previously reported results concerning the passivation quality using different passivation schemes. Short-term high temperature and high current electrical stress tests indicates that the SiN-passivated devices using InAlAs as the emitter may have better stability than those with InP emitter. Our results suggest that engineering of emitter layer structures could be an alternative approach to suppress passivation-induced degradation in InP-based HBTs.

Published in:

Electron Devices, IEEE Transactions on  (Volume:51 ,  Issue: 1 )

Date of Publication:

Jan. 2004

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.