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The sheet resistance (Rs) initially decreases with increasing BF2+ dose for implants exceeding the amorphization dose. This trend reverses after the implanted dose reaches a certain limit. Further dose increase results in a higher Rs and a deeper junction, without offering additional benefits. Fluorine gettered at implant-induced defect sites is responsible for this undesired behavior. Experimental results show that gettered fluorine and boron-fluorine bonds, formed at heavily damaged crystal sites, reduce boron activation.