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SIMOX wafer fabrication by 100mA O+ implantation using the UI-6000 implanter

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10 Author(s)

Implant characteristics of SIMOX implanter UI-6000 were investigated under the condition of a 100mA-class O+ beam current. Operation data of the UI-6000 showed that the mass-analyzed 100mA O+ implantation can be effectively applied to high quality SIMOX-SOI wafer fabrication.

Published in:

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

Date of Conference:

27-27 Sept. 2002