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Low energy arsenic implants used in the formation of ultra-shallow junctions are characterized on the GSD/Ultra high current ion implanter. Significant advantages in beam current and process throughput are demonstrated by using the Arsenic dimer ion (As2+) for implant energies lower than 5 keV. Dimer implants require only half the dose and use twice the energy of equivalent As implants, resulting in significantly reduced implant times. Process results including Thermawave (TW), sheet resistance (Rs) and SIMS profiles show equivalence between As+ and As2+ implants.