By Topic

Monolithic SOI-MEMS capacitive pressure sensor with standard bulk CMOS readout circuit

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ylimaula, M. ; Microelectron., VTT Inf. Technol., Finland ; Åberg, M. ; Kiihamaki, J. ; Ronkainen, H.

We report an integrated monolithic micromechanical capacitive pressure sensor circuit based on novel method for fabricating pressure detecting vacuum cavities into buried oxide of SOI-wafer. The method allows fabricating the readout circuit with standard bulk CMOS process. The readout circuit of the pressure sensor is a low-power CMOS relaxation oscillator.

Published in:

Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European

Date of Conference:

16-18 Sept. 2003