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CMOS x-ray image sensor with pixel level A/D conversion

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4 Author(s)
Rocha, J.G. ; Dept. of Ind. Electron., Minho Univ., Guimaraes, Portugal ; Ramos, N.F. ; Wolffenbuttel, R.F. ; Correia, J.H.

This paper describes a pixel array for x-rays imaging consisting in 400 /spl mu/m /spl times/ 400 /spl mu/m photodiodes fabricated in CMOS technology, with an A/D converter for each one. Above the photodiodes, an array of scintillating CsI:Tl crystals are placed. So, the x-ray energy is first converted to visible light by the scintillating crystal which is then detected by the photodiodes. The photocurrent produced by each photodiode is finally converted to a digital form by a sigma-delta analog to digital converter. The sigma-delta a/d converter uses 18 minimum-size MOSFETs and one capacitor. 8 to 10 bits of resolution can be achieved.

Published in:
Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European

Date of Conference: 16-18 Sept. 2003

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