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Lanthanum oxide (La/sub 2/O/sub 3/) was deposited by MBE on n-Si(100), and annealed at 400/spl deg/C in vacuum in-situ for 90 min. Ag or Al metal electrodes were attached. From the electric field and temperature dependence of the current of the gate oxide, it has been shown that the main conduction mechanism is the P-F (Poole-Frenkel) conduction and contributed by the SCLC (space-charge-limited current), depending on the bias conditions. The dielectric constant obtained from the P-F conduction equation was 10 and was consistent with the C-V result. We also realized that SCLC plays a role in the low gate voltage region of the P-F conduction, which ranges in an absolute voltage less than 0.34 V.