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A 0.25 /spl mu/m SiGe BiCMOS technology including integrated RF passive components optimised for low power applications

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6 Author(s)

A high performance SiGe HBT has been integrated in a 0.25 /spl mu/m BiCMOS technology optimised for low power applications. A deep trench module is implemented, offering a reduction of the perimeter collector-substrate capacitance by a factor of 5 while at the same time maintaining the wafer surface topography. The in-situ boron doped SiGe profile has been optimised towards a reduction of the base-emitter capacitance. High-quality, low-cost passive components like varactors, high-Q post-processed inductors and highly linear nondispersive MIM capacitors are offered, broadening the low power capabilities of this technology.

Published in:

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Date of Conference:

16-18 Sept. 2003

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