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Atomic-scale modeling of source-to-drain tunneling in ultimate Schottky barrier double-gate MOSFETs

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5 Author(s)
Bescond, M. ; Lab. Materiaux et Microelectronique de Provence, Maison des Technol., Toulon, France ; Autran, J.L. ; Munteanu, D. ; Cavassilas, N.
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The transport properties of single conduction channel Schottky barrier double-gate MOSFETs have been investigated by self-consistently solving the 2D Poisson equation with the Schrodinger equation, expressed in tight-binding using the Green's function formalism. In this atomic-scale approach, the source-channel-drain axis of the transistor has been modeled by an atomic linear chain, sandwiched between two silicon oxides and gate electrodes. The dependence of source-to-drain tunneling with channel length and gate electrode workfunction as well as its impact on device characteristics have been carefully investigated. The results show that source-to-drain tunneling does set an ultimate scaling limit well below 10 nm.

Published in:

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Date of Conference:

16-18 Sept. 2003