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Compact modeling of nanoscale MOSFETs in the ballistic limit

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6 Author(s)
Jimenez, D. ; Departament d''Enginyeria Electronica, Autonomous Univ. of Barcelona, Bellaterra, Spain ; Saenz, J.J. ; Iniguez, B. ; Sune, J.
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We present a compact model based on the Landauer transmission theory for the silicon quantum wire/well metal-oxide-semiconductor field effect transistor (MOSFET) working in the ballistic limit. This model captures the static current-voltage characteristics in all the operation regimes, below and above threshold voltage. The model provides a basic framework to account for the electronic transport in MOSFETs, being easily adaptable to gate structures as the double-gate (DG) or gate-all-around (GAA). Numerical simulations based on the proposed model have been compared with quantum mechanical self-consistent simulations and experimental results, with good agreement.

Published in:

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Date of Conference:

16-18 Sept. 2003