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Realization of high-efficiency 10 GHz bandwidth silicon photodetector arrays for fully integrated optical data communication interfaces

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5 Author(s)
Emsley, M.K. ; Dept. of Electr. & Comput. Eng., Boston Univ. Photonics Center, MA, USA ; Dosunmu, O. ; Unlu, M.S. ; Muller, P.
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We present a commercially reproducible fabrication technique for producing high quantum efficiency photodiodes with up to 10 GHz bandwidth on double silicon-on-insulator (SOI) wafers. The substrate consists of a two-period distributed Bragg reflector (DBR), which provides a 90% reflecting surface. Resonant-cavity-enhanced (RCE) Si photodetectors with 40% quantum efficiency at 860 nm and a FWHM of 29 ps suitable for 10 Gbps data communications are demonstrated We also demonstrate integrated photodiode arrays in silicon substrate for multi-channel high speed serial interfaces.

Published in:

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Date of Conference:

16-18 Sept. 2003