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An efficient electromagnetic-physics-based numerical technique for modeling and optimization of high-frequency multifinger transistors

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3 Author(s)
Hussein, Y.A. ; Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA ; El-Ghazaly, S.M. ; Goodnick, S.M.

We present a fast wavelet-based time-domain modeling technique to study the effect of electromagnetic (EM)-wave propagation on the performance of high-power and high-frequency multifinger transistors. The proposed approach solves the active device model that combines the transport physics, and Maxwell's equations on nonuniform self-adaptive grids, obtained by applying wavelet transforms followed by hard thresholding. This allows forming fine and coarse grids in the locations where variable solutions change rapidly and slowly, respectively. A CPU time reduction of 75% is achieved compared to a uniform-grid case, while maintaining the same degree of accuracy. After validation, the potential of the developed technique is demonstrated by EM-physical modeling of multifinger transistors. Different numerical examples are presented, showing that accurate modeling of high-frequency devices should incorporate the effect of EM-wave propagation and electron-wave interactions within and around the device. Moreover, high-frequency advantages of multifinger transistors over single-finger transistors are underlined through numerical examples. To our knowledge, this is the first time in the literature a fully numerical EM-physics-based simulator for accurate modeling of high-frequency multifinger transistors is introduced and implemented.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:51 ,  Issue: 12 )