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Nonlinear behaviors of low-temperature-grown GaAs-based photodetectors around 1.3-μm telecommunication wavelength

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8 Author(s)
Jin-Wei Shi ; Dept. of Electr. Eng., Nat. Central Univ., Taiwan, Taiwan ; Yen-Hung Chen ; K. -G. Gan ; Yi-Jen Chiu
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We observed distinct bandwidth degradation behaviors in low-temperature-grown GaAs (LTG-GaAs)-based traveling-wave photodetectors (PDs) under ∼1300-nm telecommunication wavelength operation. Compared with the bandwidth degradation behaviors of different excitation wavelengths (∼800 and ∼1550 nm) in LTG-GaAs-based PDs, the saturation behaviors at the studied wavelength are more serious and can be attributed to "hot electron" effect of photogenerated carriers. The disclosed unique material properties of LTG-GaAs are important for its applications in ultrafast optoelectronics and understanding its carrier dynamics with the defect states.

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IEEE Photonics Technology Letters  (Volume:16 ,  Issue: 1 )