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Light emission near 1.3 μm using ITO-Al2O3-Si/sub 0.3/Ge/sub 0.7/-Si tunnel diodes

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6 Author(s)
C. Y. Lin ; Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Taiwan, Taiwan ; A. Chin ; Y. T. Hou ; M. F. Li
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We have fabricated Sn : In2O3 (ITO)-Al2O3 dielectric on Si/sub 1-x/Ge/sub x/-Si metal-oxide-semiconductor tunnel diodes which emit light at around 1.3 μm, for x=0.7. The emitted photon energy is smaller than the bandgap energy of Si, thus, avoiding strong light absorption by the Si substrate. The optical device structure is compatible with that of a metal-oxide-semiconductor field-effect transistor, since a conventional doped poly-Si gate electrode will be transparent to the emitted light. Increasing the Ge composition from 0.3 to 0.4 only slightly decreases the light-emitting efficiency.

Published in:

IEEE Photonics Technology Letters  (Volume:16 ,  Issue: 1 )