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RF bandpass filter design based on CMOS active inductors

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4 Author(s)

In this paper, a second-order RF bandpass filter based on active inductor has been implemented in a 0.35 μm CMOS process. Issues related to the intrinsic quality factor and dynamic range of the CMOS active inductor are addressed. Tuned at 900 MHz with Q=40, the filter has 28-dB spurious-free-dynamic-range (SFDR) and total current consumption (including buffer stage) is 17 mA with 2.7-V power supply. Experimental results also show the possibility of using them to build higher order RF filter and voltage-controlled oscillator (VCO).

Published in:

Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on  (Volume:50 ,  Issue: 12 )

Date of Publication:

Dec. 2003

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