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Current-mode CMOS image sensor using lateral bipolar phototransistors

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2 Author(s)
Ying Huang ; Rockwell Semicond., Thousand Oaks, CA, USA ; R. I. Hornsey

A current-mode image sensor has been designed using current mirrors with amplifying device ratios. Prototype sensors have been fabricated in a standard 0.18-μm CMOS technology. Image capture is demonstrated from two 70 × 48 pixel arrays, using photodiodes and lateral bipolar phototransistors as the photodetectors. The latter type displays a reduced fixed pattern noise, while linearity is similar to that of the photodiode pixel. The lateral bipolar phototransistor pixels also show a greater response in the red region of the visible spectrum.

Published in:

IEEE Transactions on Electron Devices  (Volume:50 ,  Issue: 12 )