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This brief discusses a benchmarking methodology for the evaluation of performance parameters (gmmax and Idsat) of MOSFETs with alternative gate dielectrics. It is shown that assuming ideal scaling for either or with electrical oxide thickness (gmmax or Idsat ∝ Toxinv-α with α = 1) instead of using experimental scaling trends for a baseline dielectric results in unrealistically pessimistic conclusions about the performance of alternative gate dielectrics. Factors In addition to mobility reduction which can contribute to sub-ideal scaling (α < 1) for any dielectric are discussed. This bench marking methodology for performance evaluation is demonstrated for oxynitride gate dielectric films with equivalent oxide thickness (EOT) approaching 11 Å.