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AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high breakdown voltage by optimized field plate technique and the low on-state resistance of 3.3 mΩcm2, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm2 turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.
Published in:
Electron Devices, IEEE Transactions on
(Volume:50
,
Issue:
12
)
Date of Publication: Dec. 2003
- Page(s):
- 2528 - 2531
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 7950310
- Digital Object Identifier :
- 10.1109/TED.2003.819248
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 January 2004
- Issue Date :
- Dec. 2003
- Sponsored by :
- IEEE Electron Devices Society
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