Notification:
We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Generation-recombination noise in the near fully depleted SIMOX SOI n-MOSFET - physical characteristics and modeling

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ang, D.S. ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore ; Lun, Z. ; Ling, C.H.

Noise measurement in the linear regime of the device characteristics shows the evolution of an important Lorentzian-like component in the thin-film SIMOX silicon-on-insulator (SOI) n-MOSFET, during the transition from fully depleted to near fully (or partially) depleted operation. The same noise component co-exists with another Lorentzian-like component commonly observed in the kink region, thus distinguishing it from the latter, which is associated with a shot-noise mechanism. Evidence unambiguously shows that local potential fluctuations, caused by random generation-recombination (G-R) processes at bulk defects in the depleted SOI film, are primarily responsible. Extracted trap energy of ∼0.4-0.45 eV below the silicon conduction band edge confirms the involvement of deep-level electron traps, which are probably linked to the residual oxygen and SiO2 precipitates in the SOI film. A new analytical G-R noise model yields bulk traps with an average density of ∼1016 cm-3, situated at ∼22-32 nm from the front interface. With an area density comparable to that of the front interface states, the proximity of these bulk traps to the conducting channel in thin-film SIMOX SOI devices accounts for the dominance of bulk-trap induced G-R noise over conventional 1/f noise due to near-interface oxide traps.

Published in:

Electron Devices, IEEE Transactions on  (Volume:50 ,  Issue: 12 )