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Effects of gate notching profile defect on performance characteristics of short-channel NMOSFET with channel length of 0.12 μm

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9 Author(s)
Sang-Hun Seo ; Samsung Electron. Co., Ltd., Gyungki, South Korea ; Won-Suk Yang ; Sung-Jin Kim ; Jun-Yong Ju
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In this letter, we report the effects of gate notching on the performance characteristics of short-channel NMOS transistor with the gate oxide thickness of 32 /spl Aring/. The significant gate-notching defect into channel region brings about the serious degradation of such transistor performances as transconductance (G/sub m/) characteristic and subthreshold swing (S/sub t/), resulting in increases of threshold voltage (V/sub TH/) and leakage current (I/sub OFF/) and the considerable reduction of drive current (I/sub ON/). We will suggest the local thickening of gate oxide as a main mechanism of its effects and show that lack of gate-to-source/drain extension (SDE) overlap may be an additional reason for the degradation of I/sub ON/ with increasing the notch depth.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 12 )

Date of Publication:

Dec. 2003

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