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Gamma radiation-induced changes in the electrical and optical properties of tellurium dioxide thin films

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2 Author(s)
Arshak, Khalil ; Electron. & Comput. Eng. Dept., Univ. of Limerick, Ireland ; Korostynska, O.

Thin films of tellurium dioxide (TeO/sub 2/) were investigated for /spl gamma/-radiation dosimetry purposes. Samples were fabricated using thermal evaporation technique. Thin films of TeO/sub 2/ were exposed to a /sup 60/Co /spl gamma/-radiation source at a dose rate of 6 Gy/min at room temperature. Absorption spectra for TeO/sub 2/ films were recorded and the values of the optical band gap and energies of the localized states for as-deposited and /spl gamma/-irradiated samples were calculated. It was found that the optical band gap values were decreased as the radiation dose was increased. Samples with electrical contacts having a planar structure showed a monotonic increase in the values of current with the increase in radiation dose up to a certain dose level. The observed changes in both the optical and the electrical properties suggest that TeO/sub 2/ thin film can be considered as an effective material for room temperature real time /spl gamma/-radiation dosimetry.

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Sensors Journal, IEEE  (Volume:3 ,  Issue: 6 )