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An above IC MEMS RF switch

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7 Author(s)
D. Saias ; STMicroclectronics, Crolles, France ; P. Robert ; S. Boret ; C. Billard
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Addressing reconfiguration of radio frequency (RF) systems might require high performance integrated RF switching capabilities. In this regard, a particular design experience of an integrated circuit (IC) monolithically integrated microelectromechanical systems (MEMS) ohmic switch is reported here. Applications at 2 GHz have been targeted. The MEMS device was processed on top of a 0.25-μm standard BiCMOS wafer including the switch IC driver. An extensive RF characterization has been made. The switch exhibits at 2 GHz a 0.18-dB insertion loss and a 57-dB isolation level. This realization opens the way to further designs of reconfigurable architectures for multiband and multistandard mobile terminals.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:38 ,  Issue: 12 )