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High-power highly reliable 1.02-1.06-/spl mu/m InGaAs strained-quantum-well laser diodes

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5 Author(s)
Yuda, M. ; NTT Photonics Labs., NTT Corp., Kanagawa, Japan ; Sasaki, Toru ; Temmyo, J. ; Sugo, Mitsuru
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By growing the InGaAs active layer at temperatures lower than in conventional growth, we extended the lasing wavelength and presented the high reliability in InGaAs strained-quantum-well laser diodes. Equivalent I-L characteristics were obtained for 1.02-, 1.05-, and 1.06-/spl mu/m laser diodes with a cavity length of 1200 /spl mu/m. Maximum output power as high as 800 mW and fundamental transverse mode operation at up to 400 mW were obtained at 1.06 /spl mu/m and an 1800-/spl mu/m cavity. Stable operation was observed for over 14 000 h under auto-power-control of 225 mW at 50/spl deg/C for the 1.02-, 1.05-, and 1.06-/spl mu/m lasers with a 900-/spl mu/m cavity.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:39 ,  Issue: 12 )

Date of Publication:

Dec. 2003

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