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Detailed experimental investigations described here show the overall characteristics of on-chip inductor and capacitor serial interconnects (L--Cs) on silicon substrates. Using a new equivalent circuit model and the measured S parameters obtained by deembedding techniques, we examine and compare a single inductor, single capacitor, and two sets of series L--Cs. Agreement between the measured and simulated S parameters is excellent. At low frequency, the first resonant frequency fres of series L--Cs can be easily determined by fres=(2π√(LC))-1, while at high frequency, parasitic parameter effects of both the substrate and the metal strips on fres of the L--Cs circuit must be considered.