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A new approach to model the I∼V characteristics for nanoscale MOSFETs

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2 Author(s)
Pattanaik, M. ; Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India ; Banerjee, S.

A compact current voltage model is proposed for nanoscale MOSFET device. I∼V characteristics are plotted based on the modified mobility and carrier velocity saturation models including the high field effects along the entire channel. Results of the proposed model are in good agreement with the experimental and TCAD simulator results down to channel length of 10 nm MOSFET.

Published in:
VLSI Technology, Systems, and Applications, 2003 International Symposium on

Date of Conference: 2003

Page(s):
265 - 268
ISSN :
1524-766X
Print ISBN:
0-7803-7765-6
INSPEC Accession Number:
8045369
Digital Object Identifier :
10.1109/VTSA.2003.1252604

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