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An accurate and general algorithm for evaluating vector quantities, such as electric field, at the nodes in a finite volume discretization is presented. The algorithm is based on the integral form of Poisson's and the carrier continuity equations. Application to the analysis of sub-50nm MOSFETs with quantum mechanical (QM) effects is demonstrated. Other applications include the coupled electrothermal simulation (Joule heat) and modeling of impact ionization.
Date of Conference: 2003