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Extremely high-Q stacked transformer-type inductors for RF applications

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6 Author(s)
S. F. Lim ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore ; K. S. Yeo ; J. G. Ma ; M. A. Do
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A stacked tunable inductor with extremely high quality factor (Q) (>2000) is presented. Compared with transformer-type inductors with interleaved configuration, full-wave electromagnetic (EM) simulation results demonstrate that the stacked structure offers greater advantages in terms of area efficiency, achievable inductance value, and peak Q frequency. Besides, detailed discussions on power levels at the inputs of driving coils are presented to illustrate the effects of parasitic capacitance between the primary coil and driving coil.

Published in:

VLSI Technology, Systems, and Applications, 2003 International Symposium on

Date of Conference:

6-8 Oct. 2003