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Effects of nitrogen incorporation HfAlOx films on gate leakage current from XPS study of Hf bonding states

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8 Author(s)
Nishimura, T. ; Adv. Semicond. Res. Center, Nat. Inst. of Adv. Ind. Sci & Technol., Tsukuba, Japan ; Iwamoto, K. ; Tominaga, K. ; Yasuda, T.
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In this paper, we focus on the impact of N incorporation on the gate leakage current and the modification of the bonding configuration of HfAlO/sub x/(N) network.

Published in:

Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on

Date of Conference:

6-7 Nov. 2003