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HfSiON gate dielectric for CMOS applications

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10 Author(s)
Takayanagi, M. ; SoC R&D Center, Yokohama, Japan ; Watanabe, T. ; Iijima, R. ; Kaneko, A.
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In this paper, we review our results on HfSiON deposited by MOCVD. Characteristics of capacitors and FETs fabricated by the conventional poly-Si gate CMOS process are discussed. We cover the issues of flatband voltage shift, effective inversion-layer mobility in relation to fabrication method of HfSiON, design consideration of HfSiON for 50 nm CMOSFETs and dielectric reliability.

Published in:

Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on

Date of Conference:

6-7 Nov. 2003