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Study of defects in MOS structures using HfAlOx gate dielectric by means of positron annihilation

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9 Author(s)
Uedono, A. ; Inst. of Appl. Phys., Tsukuba Univ., Japan ; Mitsuhashi, R. ; Horiuchi, A. ; Torii, K.
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In this article, we used monoenergetic positron beams to study defects in thin HfAlO/sub x/ films deposited on Si substrates. The positrons implanted into HfAlO/sub x/ were found to annihilate from the trapped state in open spaces; the size of the open spaces was larger than that of point defects such as monovacancies or divacancies.

Published in:

Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on

Date of Conference:

6-7 Nov. 2003