By Topic

Ru gate electrode for a La-oxide gate insulator deposited by metalorganic chemical vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Shimizu, Takashi ; Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan ; Ishii, Kenichi ; Suzuki, Eiichi

In this work we propose the Ru metal gate for a lanthanide oxide gate insulator and show satisfactory electrical properties of Ru/La oxide stack MOSFETs.

Published in:

Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on

Date of Conference:

6-7 Nov. 2003