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Charge state dependent point defect in high-k dielectric HfO2

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3 Author(s)
Shiraishi, Kenji ; Inst. of Phys., Tsukuba Univ., Japan ; Saito, M. ; Ohno, T.

In this paper, we have investigated the basic properties of O vacancies in HfO/sub 2/ by the first principle calculations. We have calculated the charge state dependent properties of an O vacancy in cubic-HfO/sub 2/.

Published in:

Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on

Date of Conference:

6-7 Nov. 2003