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Understanding the physical-chemical processes in a simulation tissue-implant interface

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3 Author(s)
Demetrescu, I. ; Gen. Chem. Dept., Bucharest Univ., Romania ; Popescu, B. ; Ionescu, D.

A model of physical chemical processes at the tissue-implant interface is proposed in this paper, taking into account the double-layer theory, and the response of the material to the simulated host environment. The investigation methods were: potentiodynamic polarization, atomic absorption spectroscopy, X-ray photoelectron spectroscopy and IR spectra.

Published in:

Semiconductor Conference, 2003. CAS 2003. International  (Volume:2 )

Date of Conference:

28 Sept.-2 Oct. 2003