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The technology of controlled deposition of CdS and CuIn1-xGaxSe2 (CIGS) polycrystalline films consisting in of electron-beam (e-beam) ablation deposition at the first stage and subsequent procedure of heat treatment in vapors of a selenium or sulfur for CIGS and CdS accordingly on second was developed. The obtained heterostructures CdS/CuIn1-xGaxSe2 display good photovoltaic properties. Admittance spectroscopy and optical absorption was applied for determination of density of concentration of deep states (N(E)), optimization of deposition process and photovoltaic properties. The continuous distribution N(E) and new type of metastable centers have been found.