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Transient analysis of Si-MOS and SiC-JFET cascode power switches

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8 Author(s)
C. Boianceanu ; Politehnic Inst. of Bucharest, Romania ; M. Brezeanu ; A. Palfi ; A. Mihaila
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The paper is concerned with the switching behaviour of the two hybrid Si/SiC high voltage cascode configurations, using OR-CAD simulations. The drive pulse parameters effects are extensively investigated. The cascode circuit with two SiC J-FETs features an easy control via the silicon MOS transistor and the ability of fast turn-on and turn off which are essential in high voltage/high speed applications.

Published in:

Semiconductor Conference, 2003. CAS 2003. International  (Volume:2 )

Date of Conference:

28 Sept.-2 Oct. 2003