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96 GHz static frequency divider in SiGe bipolar technology

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2 Author(s)
Rylyakov, A. ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Zwick, T.

We report a static frequency divider designed in a 210 GHz f/sub T/, 0.13 /spl mu/m SiGe bipolar technology. The circuit consumes about 44 mA per latch (140 mA total for the chip, with input-output stages) from a -5.5 V power supply and operates up to 96.6 GHz.

Published in:

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE

Date of Conference:

9-12 Nov. 2003

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