Referenced Items are not available for this document.
A low noise pseudomorphic high electron mobility transistor (PHEMT) with copper airbridges using sputtered WNx as the diffusion barrier has been developed. Both the material system and the copper airbridged PHEMT with WNx as the diffusion barrier did not decay even after thermal annealing at 250°C for 20 h. The results show that the copper airbridges with WNx diffusion barrier can be used as the interconnects for low noise GaAs PHEMTs.
Published in:
Electronics Letters
(Volume:39
,
Issue:
24
)
Date of Publication: 27 Nov. 2003
- Page(s):
- 1763 - 1765
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 7805717
- Digital Object Identifier :
- 10.1049/el:20031133
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 19 December 2003
- Issue Date :
- 27 Nov. 2003
- Sponsored by :
- Institution of Engineering and Technology
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