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Linewidth of InP-based 1.55 μm VCSELs with buried tunnel junction

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9 Author(s)
Shau, R. ; Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany ; Halbritter, H. ; Riemenschneider, F. ; Ortsiefer, M.
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Spectral linewidth measurements of 1.55 μm InGaAlAs/InP vertical-cavity surface-emitting lasers (VCSELs) employing a buried tunnel junction are reported. A narrow linewidth around 28 MHz was obtained at a power level of 0.5 mW using the self-heterodyne method, and an estimation for the linewidth enhancement factor is given.

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Electronics Letters  (Volume:39 ,  Issue: 24 )