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High-power (200 mW) singlemode operation of InGaAsN/GaAs ridge waveguide lasers with wavelength around 1.3 μm

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8 Author(s)
Kovsh, A.R. ; Ind. Technol. Res. Inst., Taiwan, Taiwan ; Wang, J.S. ; Hsiao, R.S. ; Chen, L.P.
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High-power narrow ridge waveguide lasers emitting with a wavelength around 1.3 μm were realised with a single In0.36GaAsN0.022 quantum well with GaAs barriers. A narrow vertical far-field angle of 35° was obtained. Single lateral mode continuous-wave operation with slope efficiency of 0.57 W/A, series resistance of 2.6 Ω, and kink-free output power of 210 mW was achieved.

Published in:

Electronics Letters  (Volume:39 ,  Issue: 24 )