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Photoluminescence of the GaAs superlattices with quasidelta-doped layers

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7 Author(s)
Zvonkov, B.N. ; Sci.-Res., Physico-Tech. Inst., Novgorod ; Aleshkin, V.Y. ; Morozov, S.V. ; Gavrilenko, V.I.
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Doping superlattices, or n-i-p-i crystals, have advanced properties for the development of novel optoelectronic devices. The delta-doping technology extends possibilities of the superlattice design and allows improving the characteristics compared with homogeneously doped n-i-p-i structures. For the delta-doping, molecular-beam epitaxy is most widely applied. The GaAs delta-doped superlattices were also grown by metal-organic vapor-phase epitaxy. For n- and p-type delta-doping, Si and C were used and tunable low-temperature photoluminescence (PL) was demonstrated. In this work, the GaAs short-period superlattices have been grown for the first time by the metal-organic hydride epitaxy method using Se and C for quasi-delta-doping. Earlier, such a method was applied for making the photosensitive heterostructures with the GalnAs quantum-well spacer. The PL spectra measured at 4.2 K display a structure shape with well-distinguished peaks which coincide with allowed optical transitions between quantized levels of electrons and holes in the potential relief quantum wells. Such a behavior has been also observed for structures grown by gas-source molecular-beam epitaxy

Published in:

Advanced Optoelectronics and Lasers, 2003. Proceedings of CAOL 2003. First International Conference on  (Volume:2 )

Date of Conference:

16-20 Sept. 2003