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Residual phase noise performance of X-band GaAs FET amplifiers at liquid nitrogen temperature

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2 Author(s)
Mitzan, M. ; US Army LABCOM, Electron. Technol. & Devices Lab., Fort Monmouth, NJ, USA ; McGowan, R.

High-performance X-band GaAs FET amplifiers were evaluated at room temperature and 77 K, to determine the residual phase noise of the amplifiers. The data revealed 15-50 dBc/Hz degradation in the close-in residual phase noise when the amplifiers were operated at 77 K

Published in:

Circuits, Devices and Systems, IEE Proceedings G  (Volume:139 ,  Issue: 1 )