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Electroabsorption and electrooptic modulation in single crystal ZnSe-ZnSSe waveguides grown by OMVPE on GaAs

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4 Author(s)
M. H. Jupina ; Center for Laser Studies, Univ. of Southern California, Los Angeles, CA, USA ; E. M. Garmire ; N. Shibata ; S. Zembutsu

Electroabsorption and the electrooptical effect were used to modulate argon laser light in ZnSe single crystal waveguides. The electrical contacts were Schottky barriers that created a nonuniform electric field in the samples. The nonuniform electric fields are modeled, and the experimental results are matched to this model. The electroabsorption experiments showed a modulation depth of 9.2 dB at an applied voltage of 255 V and a wavelength of 476 nm. With the same applied voltage at λ=488 nm the modulation depth was only 0.53 dB. Electrooptic phase modulation was also investigated. A phase shift of π was found at 60 V for a sample of 3 mm length. The half wave voltage was independent of wavelength for wavelengths from 488 to 515 nm

Published in:

IEEE Journal of Quantum Electronics  (Volume:28 ,  Issue: 3 )