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Room temperature laser operation of strained InGaAs/GaAs QW structure monolithically grown by MOCVD on LE-PECVD Ge/Si virtual substrate

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7 Author(s)
Chriqui, Y. ; Lab. de Photonique et de Nanostructures L.P.N., Marcoussis, France ; Saint-Girons, G. ; Bouchoule, S. ; Moison, J.-M.
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Th first successful realisation of MOVPE grown strained InGaAs/GaAs long-wavelength quantum well (QW) laser structures integrated on Si substrates via strained relaxed Ge/GeSi buffer layers is reported. Room temperature (RT) operation at an emission wavelength of 1.04 μm was obtained from broad area devices. Identical control laser diodes grown on bulk germanium substrates showed similar threshold current density, demonstrating the potential of Ge/Si-virtual substrate (VS) for monolithic integration of long-wavelength GaAs-based lasers on Si.

Published in:

Electronics Letters  (Volume:39 ,  Issue: 23 )

Date of Publication:

13 Nov. 2003

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