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Five-contact silicon structure based integrated 3D Hall sensor

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2 Author(s)

A new silicon integrated 3D Hall sensor for high-accuracy magnetic field measurements is suggested and tested. Its unique device design in having only five n+ contacts allows simultaneous and independent obtaining of the full information about the three components of the magnetic field vector. The device is manufactured through a simple planar process and requires the use of four masks. The lateral dimensions of the sensor are 270×270 μm; the channel magnetosensitivities are Sx=Sy=85 V/AT and Sz=29 V/AT; the nonlinearity and channel cross-sensitivities at B≤1 reach no more than 0.6% and 3-4%, respectively; and the frequency response to AC magnetic field is greater than 30 kHz

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Electronics Letters  (Volume:39 ,  Issue: 23 )