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A novel RF vertical MOSFET for pulsed applications [UHF amplifier]

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1 Author(s)
Wilson, P.H. ; Fairchild Semicond., Discrete Power Technol., San Jose, CA, USA

This paper discusses the results of a high breakdown voltage vertical DMOS RF amplifier that employs power trench technology™ to achieve high pulse RF peak power. The RF device can achieve a power of 80 W at an operating voltage of 26 V and a 5% duty cycle.

Published in:

Microwave and Optoelectronics Conference, 2003. IMOC 2003. Proceedings of the 2003 SBMO/IEEE MTT-S International  (Volume:1 )

Date of Conference:

20-23 Sept. 2003