By Topic

Low temperature grown poly-SiGe thin film by Au metal-induced lateral crystallisation (MILC) with fast MILC growth rate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Chen, S.F. ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Fang, Y.K. ; Wang, W.D. ; Lin, C.Y.
more authors

A report is presented of the growth of poly-SiGe thin films by gold (Au) metal-induced lateral crystallisation (MILC) technology under various conditions. The MILC growth rate induced by Au is high and can attain 15.1-22.8 μm/h under 500°C annealing. The rate is much faster than the conventional metal-induced solid-phase crystallisation with Ni. Additionally, the annealing temperature can be lowered to 450°C. The Au-MILC process possesses potential application for fabrication of low cost and high response poly-SiGe transistors on glass substrates.

Published in:

Electronics Letters  (Volume:39 ,  Issue: 22 )