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A report is presented of the growth of poly-SiGe thin films by gold (Au) metal-induced lateral crystallisation (MILC) technology under various conditions. The MILC growth rate induced by Au is high and can attain 15.1-22.8 μm/h under 500°C annealing. The rate is much faster than the conventional metal-induced solid-phase crystallisation with Ni. Additionally, the annealing temperature can be lowered to 450°C. The Au-MILC process possesses potential application for fabrication of low cost and high response poly-SiGe transistors on glass substrates.