Scheduled System Maintenance:
On Monday, April 27th, IEEE Xplore will undergo scheduled maintenance from 1:00 PM - 3:00 PM ET (17:00 - 19:00 UTC). No interruption in service is anticipated.
By Topic

High performance 0.25 μm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 6.7 W/mm at 18 GHz

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Kumar, V. ; Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA ; Lee, J.-W. ; Kuliev, A. ; Aktas, O.
more authors

MOCVD-grown 0.25 μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) have been fabricated on 6H-SiC substrates. These 0.25 μm gate-length devices exhibited maximum drain current density as high as 1.28 A/mm, peak extrinsic transconductance of 310 mS/mm, unity current gain cutoff frequency (fT) of 51 GHz, and maximum frequency of oscillation (fmax) of 115 GHz. At 18 GHz, a continuous-wave output power density of 6.7 W/mm with power-added efficiency of 26.6% was obtained, yielding the highest reported power performance of AlGaN/GaN HEMTs at 18 GHz.

Published in:

Electronics Letters  (Volume:39 ,  Issue: 22 )