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Throughput analysis for cluster tool under transfer bound condition and its application to dry etch equipment

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3 Author(s)
Jung Hyun Cho ; Samsung Electron. Co. Ltd., Gyeonggi-Do, South Korea ; Sun Joong Ryu ; Seung-Ki Chae

When a cluster tool is in a state of transfer bound condition small changes of the wafer transfer time could cause large throughput variation of cluster tool. In our memory device fabrication line, The throughput variation between the equipment reached up to 32%. Based on the results of the cluster tool simulation, several parameters of the equipments were found to have a severe impact on the throughput variation of the equipment. The parameters of the equipment could be modified adequately. In addition, the wafer transfer time could be successfully reduced. As a result, throughput variation of the equipments was improved successfully.

Published in:
Semiconductor Manufacturing, 2003 IEEE International Symposium on

Date of Conference: 30 Sept.-2 Oct. 2003

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