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Integration of high-k dielectric thin films and hetero-structures in MIS capacitors

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High-density capacitors with capacitance density >5nF/mm2 and leakage currents in low micro-amp/cm2 have been integrated using high permittivity (k) dielectrics in MIS structures for mixed signal application. The high-k dielectrics studied were Hafnium Oxide (HfOx), Tantalum Oxide (TaOx) and hetero-structures of HfOx/TaOx. These films were deposited by ALCVD and the thermal budget of the entire process flow was restricted to <450°C, including the final passivation treatment. For the different dielectrics and hetero-structures, dependencies of the electrical properties on variations such as dielectric thickness, presence of barrier layers, and applied bias were studied. Capacitance densities above 5nF/mm2 were easily achieved while restricting the leakage currents to acceptable μ-amp/cm2 at applied voltages of 5.5 Volts. Also, a preliminary investigation of the reliability of these dielectrics exhibited promising results.

Published in:

Semiconductor Manufacturing, 2003 IEEE International Symposium on

Date of Conference:

30 Sept.-2 Oct. 2003