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Improvement of performance deviation and productivity of MOSFETs with gate length below 30 nm by flash lamp annealing

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3 Author(s)
Nishinohara, K.T. ; Semicond. Co., Toshiba Corp., Kanagawa, Japan ; Ito, T. ; Suguro, K.

The impact of flash lamp annealing (FLA) technology realizing the minimum diffusion with low sheet resistivity is investigated based on MOSFET fabrication and computer simulations. It was found that the productivity can be improved, since FLA enables to employ higher acceleration energy ion implantation and higher through-put, and that MOSFET performance can be improved with its deviation being suppressed.

Published in:
Semiconductor Manufacturing, 2003 IEEE International Symposium on

Date of Conference: 30 Sept.-2 Oct. 2003

Page(s):
175 - 178
ISSN :
1523-553X
Print ISBN:
0-7803-7894-6
INSPEC Accession Number:
7946969
Digital Object Identifier :
10.1109/ISSM.2003.1243258
Product Type:
Conference Publications

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